BLA6H0912-500 Datasheet | Ampleon

LDMOS avionics radar power transistor Rev. 05 - 1 September 2015 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 128 s;  = 10 %; IDq = 100 m A; in a class-AB production test circuit. Mode of operation f (MHz) VDS PL Gp D tr tf (V) (W) (d B) (%) (ns) (ns) pulsed RF 960 to 1200 50 450 17 50 20 CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits - Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply voltage of 50 V, an IDq of 100 m A, a tp of 128 s with  of 10 %: - Output power = 450 W - Power gain = 17 d B - Efficiency = 50 % - Easy power control - Integrated ESD...