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BLF8G20LS-230V - Power LDMOS transistor

Datasheet Summary

Description

230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Designed for broadband operation.
  • Lower output capacitance for improved performance in Doherty.

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Datasheet Details

Part number BLF8G20LS-230V
Manufacturer Ampleon
File Size 336.62 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF8G20LS-230V Datasheet
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Full PDF Text Transcription

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BLF8G20LS-230V Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1805 to 1880 1800 28 55 18 31.7 29 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. 1.
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