BLF8G22LS-140 Datasheet PDF - Ampleon Power LDMOS transistor Specs

BLF8G22LS-140 - Power LDMOS transistor

Datasheet Summary

Description

140 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

Excellent ruggedness.
High efficiency.
Low Rth providing excellent thermal stability.
Designed for broadband operation (2000 MHz to 2200 MHz).
Lower output capacitance for improved performance in Doherty.

Datasheet Details

Part number	BLF8G22LS-140
Manufacturer	Ampleon
File Size	342.91 KB
Description	Power LDMOS transistor
Datasheet	BLF8G22LS-140 Datasheet
Additional preview pages of the BLF8G22LS-140 datasheet.

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Full PDF Text Transcription

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BLF8G22LS-140 Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2170 900 28 33 18.5 32.5 31[1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. 1.

Published: Apr 26, 2018 |