Datasheet4U Logo Datasheet4U.com

BLF8G22LS-160BV - Power LDMOS transistor

General Description

160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2000 MHz to 2200 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Decoupling leads to enable improved video bandwidth (100 MHz typical).
  • Lower output capacitance for improved performance in Doherty.

📥 Download Datasheet

Datasheet Details

Part number BLF8G22LS-160BV
Manufacturer Ampleon
File Size 1.04 MB
Description Power LDMOS transistor
Datasheet download datasheet BLF8G22LS-160BV Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLF8G22LS-160BV Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2170 1300 32 55 18.0 32 31 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. 1.