BLF8G22LS-160BV
BLF8G22LS-160BV is Power LDMOS transistor manufactured by Ampleon.
description
160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit.
Test signal f
IDq
VDS PL(AV)
Gp
D ACPR
(MHz)
(m A) (V) (W)
(d B) (%) (d Bc)
2-carrier W-CDMA
2110 to 2170
1300 32 55
18.0 32
- 31 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 d B at 0.01 % probability on CCDF; carrier spacing 5 MHz.
1.2 Features and benefits
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Decoupling leads to enable improved video bandwidth (100 MHz typical)
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- Integrated current sense
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(Ro HS)
1.3 Applications
- RF power amplifier for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range
Power LDMOS transistor
2. Pinning information
Table 2. Pin 1 2 3 4,5 6 7
Pinning Description drain gate source video decoupling sense gate sense drain
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
1, 4, 5...
