BLF8G20LS-160V Description
160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit. PAR = 8.4 dB at 0.01 % probability on CCDF;.
BLF8G20LS-160V Key Features
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Designed for broadband operation
- Lower output capacitance for improved performance in Doherty