• Part: BLF8G27LS-100
  • Description: Power LDMOS transistor
  • Category: Transistor
  • Manufacturer: Ampleon
  • Size: 333.55 KB
Download BLF8G27LS-100 Datasheet PDF
Ampleon
BLF8G27LS-100
description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (m A) (V) (W) (d B) (%) (d Bc) 2-carrier W-CDMA 2500 to 2700 900 28 25 17 28 - 32 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 d B at 0.01 % probability on CCDF per carrier; 5 MHz carrier spacing. 1.2 Features and benefits - Excellent ruggedness - High efficiency - Low thermal resistance providing excellent thermal stability - Designed for broadband operation (2500 MHz to 2700 MHz) - Lower output capacitance for improved performance in Doherty applications - Designed for low memory effects providing excellent...