BLF8G27LS-100GV Overview
BLF8G27LS-100V; BLF8G27LS-100GV Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB)...
BLF8G27LS-100GV Key Features
- Excellent ruggedness
- High efficiency
- Low Rth providing excellent thermal stability
- Decoupling leads to enable improved video bandwidth (110 MHz typical)
- Designed for broadband operation (2500 MHz to 2700 MHz)
- Lower output capacitance for improved performance in Doherty app