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BLF8G27LS-100GV - Power LDMOS transistor

This page provides the datasheet information for the BLF8G27LS-100GV, a member of the BLF8G27LS-100V Power LDMOS transistor family.

Datasheet Summary

Description

100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low Rth providing excellent thermal stability.
  • Decoupling leads to enable improved video bandwidth (110 MHz typical).
  • Designed for broadband operation (2500 MHz to 2700 MHz).
  • Lower output capacitance for improved performance in Doherty app.

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Datasheet preview – BLF8G27LS-100GV

Datasheet Details

Part number BLF8G27LS-100GV
Manufacturer Ampleon
File Size 382.71 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF8G27LS-100GV Datasheet
Additional preview pages of the BLF8G27LS-100GV datasheet.

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Full PDF Text Transcription

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BLF8G27LS-100V; BLF8G27LS-100GV Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2500 to 2700 900 28 25 17 28 32 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF per carrier; 5 MHz carrier spacing. 1.
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