BLF8G27LS-100P Datasheet PDF - Ampleon Power LDMOS transistor Specs

BLF8G27LS-100P - Power LDMOS transistor

Datasheet Summary

Description

100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

Excellent ruggedness.
High efficiency.
Low Rth providing excellent thermal stability.
Designed for broadband operation (2500 MHz to 2700 MHz).
Lower output capacitance for improved performance in Doherty.

Datasheet Details

Part number	BLF8G27LS-100P
Manufacturer	Ampleon
File Size	936.75 KB
Description	Power LDMOS transistor
Datasheet	BLF8G27LS-100P Datasheet
Additional preview pages of the BLF8G27LS-100P datasheet.

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Full PDF Text Transcription

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BLF8G27LS-100P Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) Single carrier W-CDMA 2500 to 2700 860 28 25 18 33 35[1] [1] 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84 MHz. 1.

Published: Nov 30, 2024 |