BLF8G27LS-100P
description
100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit.
Test signal f
IDq
VDS PL(AV) Gp
D ACPR5M
(MHz)
(m A) (V) (W)
(d B) (%) (d Bc)
Single carrier W-CDMA
2500 to 2700 860 28 25
- 35[1]
[1] 3GPP test model 1; 64 DPCH; PAR = 7.2 d B at 0.01 % probability on CCDF. Channel bandwidth is 3.84 MHz.
1.2 Features and benefits
- Excellent ruggedness
- High efficiency
- Low Rth providing excellent thermal stability
- Designed for broadband operation (2500 MHz to 2700 MHz)
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(Ro HS)
1.3 Applications
- RF power...
