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BLF8G27LS-100P - Power LDMOS transistor

General Description

100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low Rth providing excellent thermal stability.
  • Designed for broadband operation (2500 MHz to 2700 MHz).
  • Lower output capacitance for improved performance in Doherty.

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Datasheet Details

Part number BLF8G27LS-100P
Manufacturer Ampleon
File Size 936.75 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF8G27LS-100P Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BLF8G27LS-100P Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) Single carrier W-CDMA 2500 to 2700 860 28 25 18 33 35[1] [1] 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84 MHz. 1.