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BLF9G38-10G - Power LDMOS transistor

Description

10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.

Table 1.

Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • High efficiency.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • Excellent thermal stability.
  • Designed for broadband operation.
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet Details

Part number BLF9G38-10G
Manufacturer Ampleon
File Size 464.77 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF9G38-10G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BLF9G38-10G Power LDMOS transistor Rev. 1 — 19 October 2017 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 3400 to 3600 70 28 2 17.7 26 30 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier; 5 MHz carrier spacing. 1.
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