BLF9G38-10G Description
10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Typical performance RF performance at Tcase = 25 C in a mon source class-AB production test circuit. PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;.
BLF9G38-10G Key Features
- High efficiency
- Integrated ESD protection
- Excellent ruggedness
- Excellent thermal stability
- Designed for broadband operation
- Internally matched for ease of use
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances