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ADG1201 - iCMOS SPST

General Description

The ADG1201 is a monolithic complementary metal-oxide semiconductor (CMOS) device containing a single-pole, single-throw (SPST) switch designed in an iCMOS® process.

iCMOS is a modular manufacturing process combining a high voltage CMOS and bipolar technologies.

Key Features

  • 2.4 pF typical off switch source capacitance, dual supply.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet Low Capacitance, Low Charge Injection, ±15 V/+12 V, iCMOS, SPST in SOT-23 ADG1201 FEATURES 2.4 pF typical off switch source capacitance, dual supply <1 pC charge injection Low leakage: 0.6 nA maximum at 85°C 120 Ω typical on resistance at 25°C, dual supply Fully specified at ±15 V, +12 V No VL supply required 3 V logic-compatible inputs VINH = 2.0 V minimum VINL = 0.8 V maximum Rail-to-rail operation 6-lead SOT-23 package APPLICATIONS Automatic test equipment Data acquisition systems Battery-powered systems Sample-and-hold systems Audio signal routing Video signal routing Communication systems GENERAL DESCRIPTION The ADG1201 is a monolithic complementary metal-oxide semiconductor (CMOS) device containing a single-pole, single-throw (SPST) switch designed in an iCMOS® process.