ADG1202 Datasheet | Analog Devices

Low Capacitance, Low Charge Injection, ±15 V/+12 V i CMOS SPST in SOT-23 ADG1202 OBSOLETE 06576-001 Features 2.4 p F off capacitance <1 p C charge injection Low leakage; 0.6 n A maximum @ 85°C 120 Ω on resistance Fully specified at ±15 V, +12 V No VL supply required 3 V logic-patible inputs Rail-to-rail operation 6-lead SOT-23 package APPLICATIONS Automatic test equipment Data acquisition systems Battery-powered systems Sample-and-hold systems Audio signal routing Video signal routing munication systems GENERAL DESCRIPTION The ADG1201/ADG1202 are monolithic plementary metal-oxide semiconductor (CMOS) devices containing an SPST switch designed in an i CMOS® (industrial CMOS) process. i CMOS is a modular manufacturing process bining high voltage CMOS and bipolar technologies. It enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no previous generation of high voltage parts has been able to achieve. Unlike analog ICs using conventional CMOS processes, i CMOS ponents can tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and reduced package size. The ultralow capacitance and charge injection of these switches make them ideal solutions for data acquisition and sample-and-hold applications, where low glitch and fast settling are required. Fast switching speed coupled with high signal bandwidth make the parts suitable for video signal switching. FUNCTIONAL BLOCK DIAGRAM ADG1201 S DS D IN IN SWITCHES SHOWN FOR A LOGIC “1” INPUT Figure 1. i CMOS construction ensures ultralow power dissipation, making the parts ideally suited for portable and batterypowered instruments. The ADG1201/ADG1202 contain a single-pole/single-throw (SPST) switch. Figure 1 shows that with a logic input of 1, the switch of the ADG1201 is closed and that of the ADG1202 is open. Each switch conducts equally well in both directions when on and has an input...