ADGM1004 - MEMS Switch

Description

The ADGM1004 is a wideband, single-pole, four-throw (SP4T) switch fabricated using Analog Devices, Inc., microelectromechanical system (MEMS) switch technology.

Features

Fully operational down to 0 Hz/dc On resistance: 2.9 Ω (maximum) Off leakage: 0.5 nA (maximum).
3 dB bandwidth 10.8 GHz (typical) for RF1, RF4 13 GHz (typical) for RF2, RF3 RF performance characteristics Insertion loss: 0.45 dB (typical) at 2.5 GHz Isolation: 24 dB (typical) at 2.5 GHz IP3: 67 dBm (typical) RF input power: 32 dBm (maximum) Actuation lifetime: 1 billion cycles (minimum) Hermetically sealed switch contacts On switching time: 75 µs (maximum) ESD HBM rating 5 kV for RF1 to R.

Analog Devices

📥 Download Datasheet

Datasheet Details

Part number	ADGM1004
Manufacturer	Analog Devices
File Size	935.08 KB
Description	MEMS Switch
Datasheet	ADGM1004 Datasheet
Additional preview pages of the ADGM1004 datasheet.

📁 Similar Datasheet

Other Datasheets by Analog Devices

ADGM1121 - MEMS Switch
ADGM1304 - Four-Throw MEMS Switch
ADG1201 - iCMOS SPST
ADG1202 - iCMOS SPST
ADG1204 - iCMOS Multiplexer
ADG1206 - iCMOS Multiplexers
ADG1206L - iCMOS Multiplexer
ADG1207 - iCMOS Multiplexers

Full PDF Text Transcription

Click to expand full text

Data Sheet 0 Hz/DC to 13 GHz, 2.5 kV HBM ESD, SP4T, MEMS Switch with Integrated Driver ADGM1004 FEATURES Fully operational down to 0 Hz/dc On resistance: 2.9 Ω (maximum) Off leakage: 0.5 nA (maximum) −3 dB bandwidth 10.8 GHz (typical) for RF1, RF4 13 GHz (typical) for RF2, RF3 RF performance characteristics Insertion loss: 0.45 dB (typical) at 2.5 GHz Isolation: 24 dB (typical) at 2.5 GHz IP3: 67 dBm (typical) RF input power: 32 dBm (maximum) Actuation lifetime: 1 billion cycles (minimum) Hermetically sealed switch contacts On switching time: 75 µs (maximum) ESD HBM rating 5 kV for RF1 to RF4 and RFC pins 2.5 kV for all other pins Integrated driver removes the need for an external driver Supply voltage: 3.0 V to 3.

Published: May 29, 2019 |