ADMV7710 Datasheet | Analog Devices

FEATURES Gain: 24 d B typical Output power for 1 d B pression: 28 d Bm typical Saturated output power: 29 d Bm typical Output third-order intercept: 34 d Bm typical Input return loss: 18 d B typical Output return loss: 10 d B typical DC supply: 4 V at 800 m A No external matching required Die size: 2.999 mm × 3.999 mm × 0.05 mm APPLICATIONS E-band munication systems High capacity wireless backhaul radio systems Test and measurement GENERAL DESCRIPTION The ADMV7710 is an integrated, E-band, gallium arsenide (Ga As), pseudomorphic, high electron mobility tranfer (p HEMT), mono-lithic microwave integrated circuit (MMIC), medium power amplifier with an on-chip, temperature pensated power detector that operates from 71 GHz to 76 GHz. The ADMV7710 provides 24 d B of gain, 28 d Bm of output power at 1 d B pression, and 29 d Bm of saturated output power at 20% power added efficiency from a 4 V power...