ADMV7810 Datasheet | Analog Devices

FEATURES Gain: 20 d B typical Output power for 1 d B pression: 28 d Bm typical Saturated output power: 29 d Bm typical Output third-order intercept: 33 d Bm typical Input return loss: 12 d B typical Output return loss: 20 d B typical DC supply: 4 V at 800 m A No external matching required Die size: 2.999 mm × 3.799 mm × 0.05 mm APPLICATIONS E-band munication systems High capacity wireless backhaul radio systems Test and measurement GENERAL DESCRIPTION The ADMV7810 is an integrated E-band gallium arsenide (Ga As), pseudomorphic, high electron mobility transfer (p HEMT), monolithic microwave integrated circuit (MMIC), medium power amplifier with a temperature pensated on-chip power detector that operates from 81 GHz to 86 GHz. The ADMV7810 provides 20 d B of gain, 28 d Bm of output power at 1 d B pression, and 29 d Bm of saturated output power at 18% power added efficiency from a 4 V power supply....