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HMC311LP3 - InGaP HBT GAIN BLOCK MMIC AMPLIFIER

General Description

The HMC311LP3(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 6 GHz amplifiers.

This 3x3mm QFN packaged amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +17 dBm output power.

Key Features

  • P1dB Output Power: +15.5 dBm Output IP3: +32 dBm Gain: 14.5 dB 50 Ohm I/O’s 16 Lead 3x3mm SMT Package: 9mm2 General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DRIVER & GAIN BLOCK AMPLIFIERS - SMT Typical Applications The HMC311LP3(E) is ideal for: • Cellular / PCS / 3G • Fixed Wireless & WLAN • CATV & Cable Modem • Microwave Radio Functional Diagram HMC311LP3 / 311LP3E v07.0420 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz Features P1dB Output Power: +15.5 dBm Output IP3: +32 dBm Gain: 14.5 dB 50 Ohm I/O’s 16 Lead 3x3mm SMT Package: 9mm2 General Description The HMC311LP3(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 6 GHz amplifiers. This 3x3mm QFN packaged amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +17 dBm output power. The HMC311LP3(E) offers 14.5 dB of gain and an output IP3 of +32 dBm while requiring only 56 mA from a +5V supply.