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HMC311LP3E - InGaP HBT GAIN BLOCK MMIC AMPLIFIER

Download the HMC311LP3E datasheet PDF. This datasheet also covers the HMC311LP3 variant, as both devices belong to the same ingap hbt gain block mmic amplifier family and are provided as variant models within a single manufacturer datasheet.

General Description

The HMC311LP3(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 6 GHz amplifiers.

This 3x3mm QFN packaged amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +17 dBm output power.

Key Features

  • P1dB Output Power: +15.5 dBm Output IP3: +32 dBm Gain: 14.5 dB 50 Ohm I/O’s 16 Lead 3x3mm SMT Package: 9mm2 General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMC311LP3-AnalogDevices.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Analog Devices

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HMC311LP3 InGaP HBT GAIN BLOCK MMIC AMPLIFIER
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DRIVER & GAIN BLOCK AMPLIFIERS - SMT Typical Applications The HMC311LP3(E) is ideal for: • Cellular / PCS / 3G • Fixed Wireless & WLAN • CATV & Cable Modem • Microwave Radio Functional Diagram HMC311LP3 / 311LP3E v07.0420 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz Features P1dB Output Power: +15.5 dBm Output IP3: +32 dBm Gain: 14.5 dB 50 Ohm I/O’s 16 Lead 3x3mm SMT Package: 9mm2 General Description The HMC311LP3(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 6 GHz amplifiers. This 3x3mm QFN packaged amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +17 dBm output power. The HMC311LP3(E) offers 14.5 dB of gain and an output IP3 of +32 dBm while requiring only 56 mA from a +5V supply.