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HMC311SC70E - InGaP HBT GAIN BLOCK MMIC AMPLIFIER

Download the HMC311SC70E datasheet PDF. This datasheet also covers the HMC311SC70 variant, as both devices belong to the same ingap hbt gain block mmic amplifier family and are provided as variant models within a single manufacturer datasheet.

General Description

The HMC311SC70(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 8 GHz amplifier.

Packaged in an industry standard SC70, the amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO port of HMC mixers with up to +15 dBm output power.

Key Features

  • P1dB Output Power: +15 dBm Output IP3: +30 dBm Gain: 15 dB Cascadable, 50 Ohm I/O’s Single Supply: +5V Industry Standard SC70 Package General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMC311SC70-AnalogDevices.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HMC311SC70 / 311SC70E v05.0517 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz DRIVER & GAIN BLOCK AMPLIFIERS - SMT Typical Applications The HMC311SC70(E) is ideal for: • Cellular / PCS / 3G • WiBro / WiMAX / 4G • Fixed Wireless & WLAN • CATV & Cable Modem • Microwave Radio & Test Equipment Functional Diagram Features P1dB Output Power: +15 dBm Output IP3: +30 dBm Gain: 15 dB Cascadable, 50 Ohm I/O’s Single Supply: +5V Industry Standard SC70 Package General Description The HMC311SC70(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 8 GHz amplifier. Packaged in an industry standard SC70, the amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO port of HMC mixers with up to +15 dBm output power.