Analog Devices HMC415LP3
The HMC415LP3 & HMC415LP3E are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 4.9 and 5.9 GHz. The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +26 dBm of saturated power, and 34% PAE from a +3V supply voltage.| Part No. | HMC415LP3 |
|---|---|
| Datasheet | HMC415LP3 Download |
| Manufacturer |  Analog Devices |
| Description | GaAs InGaP HBT MMIC POWER AMPLIFIER |
| Buy | Stock & Price |
APPLICATIONS
This amplifier is ideal for use as a power amplifier for 4.9 - 5.9 GHz applications:● 802.11a WLAN
● HiperLAN WLAN
● Access Points
● UNII & ISM Radios Functional Diagram
FEATURES
Gain: 20 dB 34% PAE @ Psat = +26 dBm 3.7% EVM @ Pout = +15 dBm with 54 Mbps OFDM Signal Supply Voltage: +3V Power Down Capability Low External Part CountGENERAL DESCRIPTION
Vpd can be used for full power down or RF output power/current control. For +15 dBm OFDM output power (64 QAM, 54 Mbps), the HMC415LP3 & HMC415LP3E achieve an error vector magnitude (EVM) of 3.7% meeting 802.11a linearity requirements.ELECTRICAL SPECIFICATIONS
, TA = +25° C, Vs = 3V, Vpd = 3V Parameter Frequency Range Gain Min. Typ. Max. 4.9 - 5.1 18 20 Min. Typ. Max. Min. Typ. Max. 5.1 - 5.4 5.4 - 5.9 18.5 20.5 16 19 Units GHz dB Gain Variation Over Temperature 0.04 0.05 0.04 0.05 0.04 0.05 dB / °C Input Return Loss Output Return Loss 10 9 8 dB 10 12 8 dB Output Power for 1dB Compression (P1dB) Icq = 285 mA 20 Icq = 200 mA 2...
