Datasheet Details
| Part number | HMC415LP3 |
|---|---|
| Manufacturer | Analog Devices |
| File Size | 401.11 KB |
| Description | GaAs InGaP HBT MMIC POWER AMPLIFIER |
| Datasheet |
 HMC415LP3 Datasheet
|
|
|
General Description
The HMC415LP3 & HMC415LP3E are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 4.9 and 5.9 GHz.
The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance.
Key Features
- Gain: 20 dB 34% PAE @ Psat = +26 dBm 3.7% EVM @ Pout = +15 dBm with 54 Mbps OFDM Signal Supply Voltage: +3V Power Down Capability Low External Part Count General.