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HMC637A - GaAs MMIC 1 WATT POWER AMPLIFIER

General Description

The HMC637A is a GaAs MMIC MESFET Distributed Power Amplifier die which operates between DC and 6 GHz.

The amplifier provides 14 dB of gain, +41 dBm output IP3 and +30.5 dBm of output power at 1 dB gain compression while requiring 400mA from a +12V supply.

Key Features

  • P1dB Output Power: +30.5 dBm Gain: 14 dB Output IP3: +41 dBm Bias Supplies: +12V, +6V, -1V 50 Ohm Matched Input/Output Die Size: 2.98 x 2.48 x 0.1 mm General.

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Full PDF Text Transcription for HMC637A (Reference)

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AMPLIFIERS - LINEAR & POWER - CHIP Typical Applications The HMC637A is ideal for: • Telecom Infrastructure • Microwave Radio & VSAT • Military & Space • Test Instrumentat...

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ucture • Microwave Radio & VSAT • Military & Space • Test Instrumentation • Fiber Optics Functional Diagram HMC637A v01.0715 GaAs MMIC 1 WATT POWER AMPLIFIER DC - 6 GHz Features P1dB Output Power: +30.5 dBm Gain: 14 dB Output IP3: +41 dBm Bias Supplies: +12V, +6V, -1V 50 Ohm Matched Input/Output Die Size: 2.98 x 2.48 x 0.1 mm General Description The HMC637A is a GaAs MMIC MESFET Distributed Power Amplifier die which operates between DC and 6 GHz. The amplifier provides 14 dB of gain, +41 dBm output IP3 and +30.5 dBm of output power at 1 dB gain compression while requiring 400mA from a +12V supply. Gain flatness is excellen

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