HMC637ALP5E Overview
Description
The HMC637ALP5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT) distributed power amplifier which operates between 0.1 GHz and 6 GHz. The amplifier provides 13 dB of gain, 44 dBm output third-order intercept (IP3), and 29 dBm of output power at 1 dB gain compression while requiring 400 mA from a 12 V supply.
Key Features
- P1dB output power: 29 dBm Gain: 13 dB Output IP3: 44 dBm 50 Ω matched input/output 32-lead, 5 mm × 5 mm LFCSP package: 25 mm2
