Description
The HMC637BPM5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), cascode distributed power amplifier.
Features
- P1dB output power: 28 dBm typical Gain: 15.5 dB typical Output IP3: 39 dBm typical Self biased at VDD = 12 V at 345 mA typical
Optional bias control on VGG1 for IDQ adjustment Optional bias control on VGG2 for IP2 and IP3 optimization 50 Ω matched input/output 32-lead, 5 mm × 5 mm LFCSP package: 25 mm2.
HMC637BPM5E Datasheet
