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HMC903LP3E - Low Noise Amplifier

General Description

The HMC903LP3E is a self biased, gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic (pHEMT), low noise amplifier (LNA) with an option bias control for IDQ reduction.

It is housed in a 16-lead, 3 mm × 3 mm, LFCSP package.

Key Features

  • Low noise figure: 1.7 dB typical at 6 GHz to 16 GHz High gain: 18.5 dB typical at 6 GHz to 16 GHz Output power for 1 dB compression (P1dB): 14.5 dBm typical at 6 GHz to 16 GHz Single-supply voltage: 3.5 V at 80 mA typical Output third-order intercept (IP3): 25 dBm typical 50 Ω matched input/output Self biased with optional bias control for IDQ reduction 16-lead, 3 mm × 3 mm, LFCSP package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet GaAs, pHEMT, MMIC, Low Noise Amplifier, 6 GHz to 17 GHz HMC903LP3E FEATURES Low noise figure: 1.7 dB typical at 6 GHz to 16 GHz High gain: 18.5 dB typical at 6 GHz to 16 GHz Output power for 1 dB compression (P1dB): 14.5 dBm typical at 6 GHz to 16 GHz Single-supply voltage: 3.5 V at 80 mA typical Output third-order intercept (IP3): 25 dBm typical 50 Ω matched input/output Self biased with optional bias control for IDQ reduction 16-lead, 3 mm × 3 mm, LFCSP package APPLICATIONS Point to point radios Point to multipoint radios Military and space Test instrumentation FUNCTIONAL BLOCK DIAGRAM HMC903LP3E 16 NIC 15 VDD1 14 VDD2 13 NIC NIC 1 GND 2 RFIN 3 NIC 4 12 NIC 11 GND 10 RFOUT 9 NIC Figure 1.