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Analog Power
N-Channel 650-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits
AM12N65P
VDS (V) 650
PRODUCT SUMMARY rDS(on) (mΩ)
800 @ VGS = 10V 850 @ VGS = 6V
ID (A) 12a
DRAIN connected to TAB
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 650
Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TC=25°C
VGS ID IDM IS
±20 12 50 40
Power Dissipation
TC=25°C
PD
300
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units V
A A W °C
Maximum Junction-to-Ambient a Maxi
AM12N65P Datasheet
