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Analog Power
AM3808NE
Dual N-Channel 20-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Battery Powered Instruments • Portable Computing • Mobile Phones • GPS Units and Media Players
PRODUCT SUMMARY rDS(on) (mΩ) 20 @ VGS = 4.5V 28 @ VGS = 2.5V
VDS (V) 20
ID(A) 6 5
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 20 VGS Gate-Source Voltage ±8 TA=25°C 6 ID Continuous Drain Current a TA=100°C 3.6 IDM Pulsed Drain Current b 22 a I 1 Continuous Source Current (Diode Conduction) S T =25°C 0.83 A PD Power Dissipation a TA=100°C 0.3 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range
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AM3808NE Datasheet
