The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Analog Power
AM3836N
N-Channel 30-V (D-S) MOSFET With Schottky Diode
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
30
63 @ VGS = 4.5V
110 @ VGS = 2.5V
ID (A) 3.5 3.0
SCHOTTKY PRODUCT SUMMARY
VKA (V)
Vf (V) Diode Forward Voltage
IF (A)
•
Low rDS(on) provides higher efficiency and
extends battery life
30
0.48V @ 1.0A
1.
AM3836N Datasheet
