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AM7001P - P-Channel MOSFET

Key Features

  • Low rDS(on) trench technology.
  • Low thermal impedance.
  • Fast switching speed Typical.

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Datasheet Details

Part number AM7001P
Manufacturer Analog Power
File Size 446.17 KB
Description P-Channel MOSFET
Datasheet download datasheet AM7001P Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Analog Power P-Channel 200-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters AM7001P VDS (V) -200 PRODUCT SUMMARY rDS(on) (mΩ) 900 @ VGS = -10V 1000 @ VGS = -5.5V ID(A) -1.6 -1.5 DFN3x3-8L ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS -200 Gate-Source Voltage VGS ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS -1.6 -1.2 -7 -3.8 Power Dissipation a TA=25°C TA=70°C PD 3.