HMC637ALP5E Description
The HMC637ALP5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT) distributed power amplifier which operates between 0.1 GHz and 6 GHz. The amplifier provides 13 dB of gain, 44 dBm output third-order intercept (IP3), and 29 dBm of output power at 1 dB gain pression while requiring 400 mA from a 12 V supply. flatness is ±0.75 dB from...