Datasheet Details
| Part number | B2D06065E1 |
|---|---|
| Manufacturer | BASiC Semiconductor |
| File Size | 276.96 KB |
| Description | SiC Schottky Diode |
| Datasheet |
 B2D06065E1 Datasheet
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General Description
of Changes Release of the datasheet.
BASiC Semiconductor Ltd.
Shenzhen, China © 2023 BASiC Semiconductor Ltd.
Key Features
- Low leakage current (IR).
- Zero reverse recovery current.
- Temperature independent switching behavior.
- Positive temperature coefficient on VF.
- High surge current capacity.
- Low capacitive charge Benefits.
- System cost savings due to smaller magnetics.
- System efficiency improvement over Si diodes.
- Reduction of heat sink requirements.
- Enabling higher frequency.
- Reduced EMI.