B2D06065E1 Description
B2D06065E1 SiC Schottky Diode Product Summary VRRM 650V Package: TO-252-3 IF (TC=160°C) QC 6A 17.
B2D06065E1 Key Features
- Low leakage current (IR)
- Zero reverse recovery current
- Temperature independent switching behavior
- Positive temperature coefficient on VF
- High surge current capacity
- Low capacitive charge
- System cost savings due to smaller magnetics
- System efficiency improvement over Si diodes
- Reduction of heat sink requirements
- Enabling higher frequency