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B2D08065K1 - SiC Schottky Diode

Description

of Changes Release of the datasheet.

BASiC Semiconductor Ltd.

Shenzhen, China © 2023 BASiC Semiconductor Ltd.

Features

  • Low leakage current (IR).
  • Zero reverse recovery current.
  • Temperature independent switching behavior.
  • Positive temperature coefficient on VF.
  • High surge current capacity.
  • Low capacitive charge Benefits.
  • System cost savings due to smaller magnetics.
  • System efficiency improvement over Si diodes.
  • Reduction of heat sink requirements.
  • Enabling higher frequency.
  • Reduced EMI.

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Datasheet Details

Part number B2D08065K1
Manufacturer BASiC Semiconductor
File Size 297.69 KB
Description SiC Schottky Diode
Datasheet download datasheet B2D08065K1 Datasheet
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B2D08065K1 SiC Schottky Diode Product Summary VRRM 650V IF (TC=160°C) 8A QC 24 nC Features  Low leakage current (IR)  Zero reverse recovery current  Temperature independent switching behavior  Positive temperature coefficient on VF  High surge current capacity  Low capacitive charge Benefits  System cost savings due to smaller magnetics  System efficiency improvement over Si diodes  Reduction of heat sink requirements  Enabling higher frequency  Reduced EMI Applications  Switch mode power supplies (SMPS)  Uninterruptible power supplies  Server/telecom power supplies  Power factor correction  Solar Package Pin Definitions  Pin1 and backside - Cathode  Pin2 - Anode Package Parameters Part Number B2D08065K1 Marking B2D08065K1 Package TO-220-2 Packing Quantiti
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