• Part: B2D10120H1
  • Manufacturer: BASiC Semiconductor
  • Size: 314.79 KB
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B2D10120H1 Description

Product Summary VRRM 1200V IF (TC=150°C) QC 10 A 51.

B2D10120H1 Key Features

  • Low leakage current (IR)
  • Zero reverse recovery current
  • Temperature independent switching behavior
  • Positive temperature coefficient on VF
  • High surge current capacity
  • Low capacitive charge
  • System cost savings due to smaller magnetics
  • System efficiency improvement over Si diodes
  • Reduction of heat sink requirements
  • Enabling higher frequency