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B2D16065HC1 - SiC Schottky Diode

Description

of Changes Release of the datasheet.

BASiC Semiconductor Ltd.

Shenzhen, China © 2023 BASiC Semiconductor Ltd.

Features

  • Low leakage current (IR).
  • Zero reverse recovery current.
  • Temperature independent switching behavior.
  • Positive temperature coefficient on VF.
  • High surge current capacity.
  • Low capacitive charge Benefits.
  • System cost savings due to smaller magnetics.
  • System efficiency improvement over Si diodes.
  • Reduction of heat sink requirements.
  • Enabling higher frequency.
  • Reduced EMI.

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Datasheet Details

Part number B2D16065HC1
Manufacturer BASiC Semiconductor
File Size 300.02 KB
Description SiC Schottky Diode
Datasheet download datasheet B2D16065HC1 Datasheet
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Full PDF Text Transcription

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Product Summary VRRM 650V IF (TC=160°C) 16 A** QC 46 nC** * Per Leg, ** Per Device Features  Low leakage current (IR)  Zero reverse recovery current  Temperature independent switching behavior  Positive temperature coefficient on VF  High surge current capacity  Low capacitive charge Benefits  System cost savings due to smaller magnetics  System efficiency improvement over Si diodes  Reduction of heat sink requirements  Enabling higher frequency  Reduced EMI Applications  Switch mode power supplies (SMPS)  Uninterruptible power supplies  Server/telecom power supplies  Power factor correction  Solar Package Pin Definitions  Pin1 - Anode  Pin2 and backside - Cathode  Pin3 - Anode Package Parameters Part Number Marking B2D16065HC1 B2D16065HC1 Package TO-247-
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