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B2D10120K1 - SiC Schottky Diode

Description

of Changes Release of the datasheet.

BASiC Semiconductor Ltd.

Shenzhen, China © 2022 BASiC Semiconductor Ltd.

Features

  • Extremely low reverse current.
  • No reverse recovery current.
  • Temperature independent switching.
  • Positive temperature coefficient on VF.
  • Excellent surge current capability.
  • Low capacitive charge Benefits.
  • Essentially no switching losses.
  • System efficiency improvement over Si diodes.
  • Increased power density.
  • Enabling higher switching frequency.
  • Reduction of heat sink requirements.
  • System cost savings due to smaller magnetics.
  • Reduce.

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Datasheet Details

Part number B2D10120K1
Manufacturer BASiC Semiconductor
File Size 322.44 KB
Description SiC Schottky Diode
Datasheet download datasheet B2D10120K1 Datasheet
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Full PDF Text Transcription

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Product Summary VRRM 1200V IF (TC=155°C) QC 10 A 51 nC Features  Extremely low reverse current  No reverse recovery current  Temperature independent switching  Positive temperature coefficient on VF  Excellent surge current capability  Low capacitive charge Benefits  Essentially no switching losses  System efficiency improvement over Si diodes  Increased power density  Enabling higher switching frequency  Reduction of heat sink requirements  System cost savings due to smaller magnetics  Reduced EMI Applications  Switch mode power supplies (SMPS)  Uninterruptible power supplies  Motor drivers  Power factor correction Package Pin Definitions  Pin1 and backside - Cathode  Pin2 - Anode Package Parameters Part Number B2D10120K1 Marking B2D10120K1 B2D10120K1 SiC Sch
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