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B2D30065H1 Datasheet SiC Schottky Diode

Manufacturer: BASiC Semiconductor

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Datasheet Details

Part number B2D30065H1
Manufacturer BASiC Semiconductor
File Size 654.41 KB
Description SiC Schottky Diode
Download B2D30065H1 Download (PDF)

Overview

Product Summary VRRM 650V IF (TC=155°C) QC 30 A 83 nC.

Key Features

  • Low leakage current (IR).
  • Zero reverse recovery current.
  • Temperature independent switching behavior.
  • Positive temperature coefficient on VF.
  • High surge current capacity.
  • Low capacitive charge Benefits.
  • System cost savings due to smaller magnetics.
  • System efficiency improvement over Si diodes.
  • Reduction of heat sink requirements.
  • Enabling higher frequency.
  • Reduced EMI.

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