Datasheet4U Logo Datasheet4U.com

BLM8205A - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The BLM8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 19.5V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin Assignment.

📥 Download Datasheet

Datasheet preview – BLM8205A

Datasheet Details

Part number BLM8205A
Manufacturer BELLING
File Size 497.29 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet BLM8205A Datasheet
Additional preview pages of the BLM8205A datasheet.
Other Datasheets by BELLING

Full PDF Text Transcription

Click to expand full text
Pb Free Product BLM8205A N-Channel Enhancement Mode Power MOSFET Description The BLM8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 19.5V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.
Published: |