Datasheet4U Logo Datasheet4U.com

BLM8205A - N-Channel Enhancement Mode Power MOSFET

General Description

The BLM8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 19.5V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin Assignment.

📥 Download Datasheet

Datasheet Details

Part number BLM8205A
Manufacturer BELLING
File Size 497.29 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet BLM8205A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLM8AD22S-60ABG LDMOS 2-stage integrated Doherty MMIC Ampleon
BLM8D1822S-50PB LDMOS 2-stage integrated Doherty MMIC Ampleon
BLM8D1822S-50PBG LDMOS 2-stage integrated Doherty MMIC Ampleon
BLM8G0710S-15PB LDMOS 2-stage power MMIC Ampleon
BLM8G0710S-15PBG LDMOS 2-stage power MMIC Ampleon

Other Datasheets by BELLING

Part Number Description
BLM8205 N-Channel Enhancement Mode Power MOSFET
BLM8205B N-Channel Enhancement Mode Power MOSFET
BLM8811 Dual N-Channel Power MOSFET
BLM04N06 60V N-Channel Power MOSFET
BLM04N08 80V N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Pb Free Product BLM8205A N-Channel Enhancement Mode Power MOSFET Description The BLM8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 19.5V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.