BLM8205B Datasheet PDF - BELLING N-Channel Enhancement Mode Power MOSFET Specs

BLM8205B - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The BLM8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

VDS = 20V,ID = 6A Typ. RDS(ON) = 16mΩ @ VGS=4.5V Typ. RDS(ON) = 19mΩ @ VGS=2.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin assignment.

Datasheet Details

Part number	BLM8205B
Manufacturer	BELLING
File Size	790.43 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	BLM8205B Datasheet
Additional preview pages of the BLM8205B datasheet.

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Full PDF Text Transcription

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Pb Free Product BLM8205B N-Channel Enhancement Mode Power MOSFET Description The BLM8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID = 6A Typ.RDS(ON) = 16mΩ @ VGS=4.5V Typ.RDS(ON) = 19mΩ @ VGS=2.

Published: Mar 2, 2016 |