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BLM8205B - N-Channel Enhancement Mode Power MOSFET

General Description

The BLM8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 20V,ID = 6A Typ. RDS(ON) = 16mΩ @ VGS=4.5V Typ. RDS(ON) = 19mΩ @ VGS=2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin assignment.

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Datasheet Details

Part number BLM8205B
Manufacturer BELLING
File Size 790.43 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet BLM8205B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Pb Free Product BLM8205B N-Channel Enhancement Mode Power MOSFET Description The BLM8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID = 6A Typ.RDS(ON) = 16mΩ @ VGS=4.5V Typ.RDS(ON) = 19mΩ @ VGS=2.