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3DA2092 - Silicon NPN transistor

Key Features

  • High hFE, low saturation voltage. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 100 V VCEO 80 V VEBO 7.0 V IC 3.0 A ICP 5.0 A IB 1.0 A PC 2.0 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCEO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VECF fT Cob ton Tstg tf IC=50mA IB=0 VCB=80V IE=0 VEB=7.0V IC=0 VCE=1.0V IC=0.5A VCE=1.0V IC=1.0A IC=1.0A IB=0.01A IC=1.0A IB=0.01A IE=3.0A IB=0 VCE=5.0V IC=1.0A VCE=10V I.

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Datasheet Details

Part number 3DA2092
Manufacturer BLUE ROCKET ELECTRONICS
File Size 288.11 KB
Description Silicon NPN transistor
Datasheet download datasheet 3DA2092 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KTD2092(3DA2092) NPN /SILICON NPN TRANSISTOR ：、。 Purpose: Switching application, interface circuit and driver circuit application. ：，。 Features: High hFE, low saturation voltage. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 100 V VCEO 80 V VEBO 7.0 V IC 3.0 A ICP 5.0 A IB 1.0 A PC 2.0 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCEO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VECF fT Cob ton Tstg tf IC=50mA IB=0 VCB=80V IE=0 VEB=7.0V IC=0 VCE=1.0V IC=0.5A VCE=1.0V IC=1.0A IC=1.0A IB=0.01A IC=1.0A IB=0.01A IE=3.0A IB=0 VCE=5.0V IC=1.0A VCE=10V IE=0 f=1.0MHz IB1=-IB2=10mA Min 80 500 150 Rating Typ 140 30 0.5 5.0 0.7 Max 10 10 1500 0.35 1.2 2.