BF8205E - Dual N-Channel MOSFET

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BYD

BF8205E Dual N-Channel MOSFET by BYD - Datasheet Preview — Datasheet preview – BF8205E

Datasheet Details

Part number	BF8205E
Manufacturer	BYD
File Size	385.36 KB
Description	Dual N-Channel MOSFET
Datasheet	BF8205E Datasheet
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Product details

Description

The BF8205E is a dual N-channel MOS Field Effect Transistor, which uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltages.

Features

z VDS =20 V z ID =6A z Low on-state resistance Fast switching RDS(on) ≤ 22mΩ (VGS = 4.5V, ID = 3.0A) RDS(on) ≤ 24mΩ (VGS = 3.8V, ID = 3.0A) RDS(on) ≤ 32mΩ (VGS = 2.5V, ID = 3.0A) z Built-in G-S protection diode against ESD. z Lead Pb-free and Halogen-free S1 D1/D2 S2 Absolute Maximum Ratings (Tc = 25℃) Symbol Parameter VDS Drain-source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-source Voltage PD Power Dissipation (TC = 25°C) TJ,Tstg Operating and Stora.

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Published: Apr 12, 2017 |