Datasheet4U Logo Datasheet4U.com

BF8205E - Dual N-Channel MOSFET

General Description

The BF8205E is a dual N-channel MOS Field Effect Transistor, which uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch.

This device has ESD protection.

Key Features

  • z VDS =20 V z ID =6A z Low on-state resistance Fast switching RDS(on) ≤ 22mΩ (VGS = 4.5V, ID = 3.0A) RDS(on) ≤ 24mΩ (VGS = 3.8V, ID = 3.0A) RDS(on) ≤ 32mΩ (VGS = 2.5V, ID = 3.0A) z Built-in G-S protection diode against ESD. z Lead Pb-free and Halogen-free S1 D1/D2 S2 Absolute Maximum Ratings (Tc = 25℃) Symbol Parameter VDS Drain-source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-source Voltage PD Power Dissipation (TC = 25°C) TJ,Tstg Operating and Stora.

📥 Download Datasheet

Datasheet Details

Part number BF8205E
Manufacturer BYD
File Size 385.36 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet BF8205E Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BF8205T Dual N-Channel MOSFET BYD Microelectronics
BF820 NPN High-Voltage Transistors GME
BF820 NPN high-voltage transistors NXP
BF820 Small Signal Transistors General Semiconductor
BF820 Silicon NPN transistor BLUE ROCKET ELECTRONICS

Other Datasheets by BYD

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BYD Microelectronics Co., Ltd. BF8205E Dual N-Channel MOSFET General Description The BF8205E is a dual N-channel MOS Field Effect Transistor, which uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch. This device has ESD protection. G1 D1/D2 G2 654 12 3 Features z VDS =20 V z ID =6A z Low on-state resistance Fast switching RDS(on) ≤ 22mΩ (VGS = 4.5V, ID = 3.0A) RDS(on) ≤ 24mΩ (VGS = 3.8V, ID = 3.0A) RDS(on) ≤ 32mΩ (VGS = 2.5V, ID = 3.0A) z Built-in G-S protection diode against ESD.