Continental Device India BF820
SILICON EPITAXIAL TRANSISTORS
| Part No. | BF820 |
|---|---|
| Datasheet | BF820 Download |
| Manufacturer |  Continental Device India |
| Description | SILICON EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector–emitter voltage (RBE = 2,7 kW ) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature D.C. current gain IC = 25 mA; VCE = 20 V Feedback capacitance at f = 1 MHz IC = 0; VCE = 30 V Transition frequency at f = 35 MHz IC = 10mA; VCE = 10 V VCB0 VCE0 VCER ICM Ptot Tj BF820 max. 300 max. – max. 300 max. max. max. BF822 250 V 250 V —V 100 mA 250 mW 150 ° C hFE > 50 Cre < 1,6 pF fT > 60 MHz Continental Device India Limited Data Sheet Page 1 of 3 BF820 BF822 RATINGS (at TA = 25°C unless otherwise specif
