The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
BCG002
2W GaN Power Transistor
2W GaN Power Transistor (0.15µm x 480µm gate)
The BeRex BCG002 is a GaN Power HEMT die with a nominal 0.15 micron gate length and 480 micron gate width making the product ideally suited for amplifier applications where high-gain and high power from DC to 26 GHz. The product may be used in either wideband or narrow-band applications. The BCG002 is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability.
Product Features
• 33.5 dBm Typical Saturated Output Power (P3dB) @ 12 GHz • 12.5 dB Typical Saturated gain (G3dB) @ 12 GHz • 55 % PAE Typical @ 12 GHz • 0.15 X 480 Micron Recessed Gate
Applications
• Commercial • Military / Hi-Rel.
BCG002 Datasheet
