BeRex BCG002
BCG002 is a GaN Power HEMT die with a nominal 0.15 micron gate length and 480 micron gate width making the product ideally suited for amplifier applications where high-gain and high power from DC to 26 GHz. The product may be used in either wideband or narrow-band applications. The BCG002 is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability.| Part No. | BCG002 |
|---|---|
| Datasheet | BCG002 Download |
| Manufacturer |  BeRex |
| Description | 2W GaN Power Transistor |
| Buy | Stock & Price |
FEATURES
● 33.5 dBm Typical Saturated Output Power (P3dB) @ 12 GHz● 12.5 dB Typical Saturated gain (G3dB) @ 12 GHz
● 55 % PAE Typical @ 12 GHz
● 0.15 X 480 Micron Recessed Gate
APPLICATIONS
● Commercial● Military / Hi-Rel.
● Test & Measurement Typical Performance SYMBOLS P3dB G3dB PAE PARAMETER/TEST CONDITIONS Saturated Output Power @ P3dB (Vds = 28V, Id = 20mA) Power Gain @ P3dB (Vds = 28V, Id = 20mA) PAE @ P3dB (Vds = 28V, Id = 20mA) TEST FREQUENCY MIN. TYPICAL Max UNIT 12 GHz 32 33.5 dBm 12 GHz 11.0 12.5 dB 12 GHz 55 % Idss Saturated Drain Current (Vgs = 0.0 V, Vds = 10.0 V) 265 330 400 mA Vp Pinch-off Voltage (Ids = 0.48 mA, Vds = 10 V) BVgd Drain Breakdown Voltage (Ig = 0.48 mA, source open) BVgs Source Breakdown Voltage (Ig = 0.48 mA, drain open) Rth Thermal Resistance -1.9 V 84 V -6.5 V 10.1 ° C/W BeRex
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●email: sales@berex.com Specifications and information are subject to change without notice. BeRex is a trademark of BeRex. All other trademarks are the property of their respective owners. © 2022 BeRex 1 Rev.
