BCG002 Description
BCG002 2W GaN Power Transistor 2W GaN Power Transistor (0.15µm x 480µm gate) The BeRex BCG002 is a GaN Power HEMT die with a nominal 0.15 micron gate length and 480 micron gate width making the product ideally suited for amplifier applications where high-gain and high power from DC to 26 GHz. The product may be used in either wideband or narrow-band applications. The BCG002 is produced using state of the art...
BCG002 Key Features
- 33.5 dBm Typical Saturated Output Power (P3dB) @ 12 GHz
- 12.5 dB Typical Saturated gain (G3dB) @ 12 GHz
- 55 % PAE Typical @ 12 GHz
- 0.15 X 480 Micron Recessed Gate