BCG002 - 2W GaN Power Transistor

Datasheet Summary

Features

33.5 dBm Typical Saturated Output Power (P3dB) @ 12 GHz.
12.5 dB Typical Saturated gain (G3dB) @ 12 GHz.
55 % PAE Typical @ 12 GHz.
0.15 X 480 Micron Recessed Gate.

BeRex

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Datasheet Details

Part number	BCG002
Manufacturer	BeRex
File Size	521.47 KB
Description	2W GaN Power Transistor
Datasheet	BCG002 Datasheet
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Full PDF Text Transcription

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BCG002 2W GaN Power Transistor 2W GaN Power Transistor (0.15µm x 480µm gate) The BeRex BCG002 is a GaN Power HEMT die with a nominal 0.15 micron gate length and 480 micron gate width making the product ideally suited for amplifier applications where high-gain and high power from DC to 26 GHz. The product may be used in either wideband or narrow-band applications. The BCG002 is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability. Product Features • 33.5 dBm Typical Saturated Output Power (P3dB) @ 12 GHz • 12.5 dB Typical Saturated gain (G3dB) @ 12 GHz • 55 % PAE Typical @ 12 GHz • 0.15 X 480 Micron Recessed Gate Applications • Commercial • Military / Hi-Rel.

Published: Dec 19, 2024 |