BCG008 - 8W GaN Power Transistor

Datasheet Summary

Features

39.0 dBm Typical Saturated Output Power (P3dB) @ 12 GHz.
9.5 dB Typical Saturated gain (G3dB) @ 12 GHz.
72 % PAE Typical @ 12 GHz.
0.15 X 1250 Micron Recessed Gate.

BeRex

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Datasheet Details

Part number	BCG008
Manufacturer	BeRex
File Size	543.01 KB
Description	8W GaN Power Transistor
Datasheet	BCG008 Datasheet
Additional preview pages of the BCG008 datasheet.

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Full PDF Text Transcription

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BCG008 8W GaN Power Transistor 8W GaN Power Transistor (0.15µm x 1250µm gate) The BeRex BCG008 is a GaN Power HEMT die with a nominal 0.15 micron gate length and 1250 micron gate width making the product ideally suited for amplifier applications where high-gain and high power from DC to 26 GHz. The product may be used in either wideband or narrow-band applications. The BCG008 is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability. Product Features • 39.0 dBm Typical Saturated Output Power (P3dB) @ 12 GHz • 9.5 dB Typical Saturated gain (G3dB) @ 12 GHz • 72 % PAE Typical @ 12 GHz • 0.15 X 1250 Micron Recessed Gate Applications • Commercial • Military / Hi-Rel.

Published: Nov 27, 2024 |