BCG004 Description
BCG004 4W GaN Power Transistor 4W GaN Power Transistor (0.15µm x 960µm gate) The BeRex BCG004 is a GaN Power HEMT die with a nominal 0.15 micron gate length and 960 micron gate width making the product ideally suited for amplifier applications where high-gain and high power from DC to 26 GHz. The product may be used in either wideband or narrow-band applications. The BCG004 is produced using state of the art...
BCG004 Key Features
- 36.5 dBm Typical Saturated Output Power (P3dB) @ 12 GHz
- 10.5 dB Typical Saturated gain (G3dB) @ 12 GHz
- 55 % PAE Typical @ 12 GHz
- 0.15 X 960 Micron Recessed Gate