BCG004 - 4W GaN Power Transistor

Datasheet Summary

Features

36.5 dBm Typical Saturated Output Power (P3dB) @ 12 GHz.
10.5 dB Typical Saturated gain (G3dB) @ 12 GHz.
55 % PAE Typical @ 12 GHz.
0.15 X 960 Micron Recessed Gate.

BeRex

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Datasheet Details

Part number	BCG004
Manufacturer	BeRex
File Size	531.94 KB
Description	4W GaN Power Transistor
Datasheet	BCG004 Datasheet
Additional preview pages of the BCG004 datasheet.

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Full PDF Text Transcription

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BCG004 4W GaN Power Transistor 4W GaN Power Transistor (0.15µm x 960µm gate) The BeRex BCG004 is a GaN Power HEMT die with a nominal 0.15 micron gate length and 960 micron gate width making the product ideally suited for amplifier applications where high-gain and high power from DC to 26 GHz. The product may be used in either wideband or narrow-band applications. The BCG004 is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability. Product Features • 36.5 dBm Typical Saturated Output Power (P3dB) @ 12 GHz • 10.5 dB Typical Saturated gain (G3dB) @ 12 GHz • 55 % PAE Typical @ 12 GHz • 0.15 X 960 Micron Recessed Gate Applications • Commercial • Military / Hi-Rel.

Published: Dec 19, 2024 |