Bluecolour 2SC3330
NPN Silicon Epitaxial Planar Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 60 50 5 200 300 150 -55 to +150 Unit V V V mA mW OC OC Page 1 of 2 7/15/2011 Characteristics at Tamb=25 OC Parameter Symbol DC Current Gain at VCE=6V, IC=1mA Current Gain Group R O Y G L hFE hFE hFE hFE hFE Collector Base Breakdown Voltage at IC=100μA Collector Emitter Breakdown Voltage V(BR)CBO at IC=10mA Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current V(BR)CEO V(BR)EBO at VCB=40V Emitter Cutoff Current ICBO at VEB=3V Collector Saturation Voltage IEBO at IC=100mA, IB=10mA Gain Bandwidth Product VCE(sat) at VCE=6V, IC=10mA Output Capacitance fT at VCB=6V, f=1MHz Noise Figure COB at VCE=6V, IE=0.5mA f=1KHz, RS=500Ω NF Min. 40 70 120 200 350 60 50 5 - - Typ. 0.15 200 2.5 4 Max. Unit 80 140 240 400 700 - -V -V -V 0.1 μA 0.1 μA 0.3 V...