2SC3330
2SC3330 is NPN Silicon Epitaxial Planar Transistor manufactured by SEMTECH.
ST 2SC3330
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.
The transistor is subdivided into five groups, R, O, Y, G and L, according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25℃)
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC Ptot Tj TS
Value 60 50 5 200 300 150
-55 to +150
Unit V V V m A m W OC OC
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
ST 2SC3330
Characteristics at Tamb=25 OC
DC Current Gain at VCE=6V, IC=1m A Current Gain Group R O Y G L
Collector Base Breakdown Voltage at IC=100μA
Collector Emitter Breakdown Voltage at IC=10m A
Emitter Base Breakdown Voltage at IE=10μA
Collector Cutoff Current at VCB=40V
Emitter Cutoff Current at VEB=3V
Collector Saturation Voltage at IC=100m A, IB=10m A
Gain Bandwidth Product at VCE=6V, IC=10m A
Output Capacitance at VCB=6V, f=1MHz
Noise Figure at VCE=6V, IE=0.5m A at f=1KHz, RS=500Ω
Symbol h FE h FE h FE h FE h FE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) f T COB
Min.
40 70 120 200 350 60 50 5
- -
Typ.
0.15 200 2.5
Max.
Unit
80 140 240 400 700
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