CHINA BASE 2SC3330
NPN Silicon Epitaxial Planar Transistor
| Part No. | 2SC3330 |
|---|---|
| Datasheet | 2SC3330 Download |
| Manufacturer | CHINA BASE |
| Description | NPN Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 60 50 5 200 300 150 -55 to +150 Unit V V V mA mW OC OC Page 1 of 2 7/15/2011 Characteristics at Tamb=25 OC Parameter Symbol DC Current Gain at VCE=6V, IC=1mA Current Gain Group R O Y G L hFE hFE hFE hFE hFE Collector Base Breakdown Voltage at IC=100μA Collector Emitter Breakdown Voltage V(BR)CBO at IC=10mA Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current V(BR