2SC3330
2SC3330 is NPN Silicon Epitaxial Planar Transistor manufactured by CHINA BASE.
2SC3330 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.
The transistor is subdivided into five groups, R, O, Y, G and L, according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25℃)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC Ptot Tj TS
Value 60 50 5 200 300 150
-55 to +150
Unit V V V m A m W OC OC
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7/15/2011
Characteristics at Tamb=25 OC
Parameter
Symbol
DC Current Gain at VCE=6V, IC=1m A
Current Gain Group R O Y G L h FE h FE h FE h FE h FE
Collector Base Breakdown Voltage at IC=100μA
Collector Emitter Breakdown Voltage
V(BR)CBO at IC=10m A Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff...
