BD745 Datasheet | Bourns

.. BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS - - - - - Designed for plementary Use with the BD746 Series 115 W at 25°C Case Temperature 20 A Continuous Collector Current 25 A Peak Collector Current Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) 1 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD745 Collector-base voltage (IE = 0) BD745A BD745B BD745C BD745 Collector-emitter voltage (IB = 0) BD745A BD745B BD745C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating free air temperature range Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 TA Tj Tstg TL VCEO V CBO SYMBOL VALUE 50 70 90 110 45 60 80 100 5 20 25 7 115 3.5 90 -65 to +150 -65 to +150 -65 to +150 260 V A A A W W m J °C °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.92 W/°C. Derate linearly to 150°C free air temperature at the rate of 28 m W/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 m H, IB(on) = 0.4 A, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. PRODUCT Data Sheet 4 U . INFORMATION AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. .. BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD745 V(BR)CEO IC = 30 m A IB = 0 (see Note 5) BD745A...