BD745 Datasheet | SavantIC

DESCRIPTION - With TO-3PN package .. - plement to type BD746/A/B/C - High current capability - High power dissipation APPLICATIONS - For use in power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD745/A/B/C - Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER BD745 VCBO Collector-base voltage BD745A BD745B BD745C BD745 VCEO Collector-emitter voltage BD745A BD745B BD745C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE 50 70 90 110 45 60 80 100 5 20 25 7 115 3.5 150 -65~150 V A A A W V V UNIT Savant IC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BD745 Collector-emitter breakdown voltage BD745A IC=30m A; IB=0 BD745B BD745C VCEsat-1 VCEsat-2 VBE -1 VBE -2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage BD745/A ICEO Collector cut-off current BD745B/C BD745 BD745A ICBO Collector cut-off current BD745B BD745C IEBO h FE-1 h FE-2 h FE-3 Emitter cut-off current DC current gain DC current gain DC current gain VCE=60V; IB=0 VCE=50V; VBE=0 TC=125 VCE=70V; VBE=0 TC=125 VCE=90V; VBE=0 TC=125 VCE=110V; VBE=0 TC=125 VEB=5V; IC=0 IC=1A ; VCE=4V IC=5A ; VCE=4V IC=20A ; VCE=4V 40 20 5 IC=5 A;IB=0.5 A IC=20 A;IB=5 A IC=5A ; VCE=4V IC=20A ; VCE=4V VCE=30V; IB=0 80 100 CONDITIONS MIN 45 60 .. BD745/A/B/C SYMBOL TYP. UNIT V(BR)CEO 1.0 3.0 1.0 3.0 0.1 0.1 5.0 0.1 5.0 0.1 5.0 0.1 5.0 0.5 m A m A m A Switching times resistive load td tr ts tf Delay time Rise time Storage time Fall time IC=5 A;IB1=-IB2=0.5 A VBE(off)=-4.2V; RL=6A tp=20µs 0.02 0.35 0.5 0.4 µs µs µs µs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER...