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BD745A - NPN Transistor

Download the BD745A datasheet PDF. This datasheet also covers the BD745 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Collector Current -IC= 20A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD745; 60V(Min)- BD745A 80V(Min)- BD745B; 100V(Min)- BD745C Complement to Type BD746/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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Note: The manufacturer provides a single datasheet file (BD745-INCHANGE.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current -IC= 20A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD745; 60V(Min)- BD745A 80V(Min)- BD745B; 100V(Min)- BD745C ·Complement to Type BD746/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD745 50 VCER Collector-Emitter Voltage (RBE= 100Ω) BD745A BD745B 70 90 BD745C 110 BD745 45 VCEO Collector-Emitter Voltage BD745A 60 BD745B 80 BD745C 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 20 ICM Collector Current-Peak 25 IB Base Current 7 Collector Power Dissipation PC @ Ta=2