BU47 Datasheet | Bourns

.. BUV47, BUV47A NPN SILICON POWER TRANSISTORS - - - Rugged Triple-Diffused Planar Construction 9 A Continuous Collector Current 1000 Volt Blocking Capability SOT-93 PACKAGE (TOP VIEW) 1 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-emitter voltage (VBE = -2.5 V) Collector-emitter voltage (RBE = 10 Ω) Collector-emitter voltage (IB = 0) Continuous collector current Peak collector current (see Note 1) Continuous base current Peak base current Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 5 ms, duty cycle ≤ 2%. BUV47 BUV47A BUV47 BUV47A BUV47 BUV47A SYMBOL VCEX VCER VCEO IC ICM IB IBM Ptot Tj Tstg VALUE 850 1000 850 1000 400 450 9 15 3 6 120 -65 to +150 -65 to +150 UNIT V V V A A A A W °C °C PRODUCT Data Sheet 4 U . INFORMATION AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. .. BUV47, BUV47A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) V(BR)EBO Collector-emitter sustaining voltage Base-emitter breakdown voltage Collector-emitter cut-off current IC = 200 m A IE = 50 m A TEST CONDITIONS L = 25 m H IC = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 RBE = 10 Ω RBE = 10 Ω RBE = 10 Ω RBE = 10 Ω IC = 0 IC = IC = IC = IC = IC = 0 5A 8A 5A 0.5 A (see Notes 3 and 4) (see Notes 3 and 4) f= 1 MHz 8 105 TC = 125°C TC = 125°C TC = 125°C TC = 125°C (see Note 2) (see Note 3) BUV47 BUV47A BUV47 BUV47A BUV47 BUV47A BUV47 BUV47A BUV47 BUV47A MIN 400 450 7 30 0.15 0.15 1.5 1.5 0.4 0.4 3.0 3.0 1 1.5 3.0 1.6 m A V V MHz p F m A m A TYP MAX UNIT V V VCE = 850 V ICES VCE = 1000 V VCE = 850 V VCE = 1000 V VCE = 850 V ICER Collector-emitter cut-off current Emitter cut-off current Collector-emitter saturation voltage Base-emitter saturation...