Datasheet Details
| Part number | BS616LV2020 |
|---|---|
| Manufacturer | Brilliance Semiconductor |
| File Size | 249.96 KB |
| Description | Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable |
| Download | BS616LV2020 Download (PDF) |
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Overview: BSI .
| Part number | BS616LV2020 |
|---|---|
| Manufacturer | Brilliance Semiconductor |
| File Size | 249.96 KB |
| Description | Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable |
| Download | BS616LV2020 Download (PDF) |
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BS616LV2020 • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 30mA (Max.) operating current I -grade: 35mA (Max.) operating current 0.5uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 3.0V -10 100ns (Max.) at Vcc = 3.0V •Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE1, CE2 and OE options • I/O Configuration x8/x16 selectable by CIO, LB and UB pin The BS616LV2020 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide range of 2.7V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power
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