BS616LV2025

Manufacturer: Brilliance Semiconductor

Datasheet Details

Part number	BS616LV2025
Datasheet	BS616LV2025_BrillianceSemiconductor.pdf
File Size	253.36 KB
Manufacturer	Brilliance Semiconductor
Description	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

BS616LV2025 Very low operation voltage : 4.5 ~ 5.5V Very low power consumption : 40mA (Max.) operating current I -grade:.

DESCRIPTION
Very low operation voltage : 4.5 ~ 5.5V
Very low power consumption : Vcc = 5.0V C-grade: 40mA (Max.) operating current I -grade: 45mA (Max.) operating current 0
High speed access time : -70 70ns (Max.) at Vcc = 5.0V -55 55ns (Max.) at Vcc = 5.0V
Automatic power down when chip is deselected
Three state outputs and TTL patible
Fully static operation
Data retention supply voltage as low as 1.5V
Easy expansion with CE1, CE2 and OE options
I/O Configuration x8/x16 selectable by CIO, LB and UB pin

Part Number	Description
BS616LV2020	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
BS616LV2021	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
BS616LV2023	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
BS616LV2010	Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2011	Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2012	Very Low Power/Voltage CMOS SRAM
BS616LV2013	Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2015	Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2016	Very Low Power CMOS SRAM
BS616LV2018	Very Low Power/Voltage CMOS SRAM 128K X 16 bit