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BS616LV2025 - Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

Datasheet Summary

Description

BS616LV2025 Very low operation voltage : 4.5 ~ 5.5V Very low power consumption : Vcc = 5.0V C-grade: 40mA (Max.) operating current I -grade: 45mA (Max.) operating current 0.6uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max.) at Vcc = 5.0V -55 55ns

Features

  • S Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable.

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Datasheet preview – BS616LV2025

Datasheet Details

Part number BS616LV2025
Manufacturer Brilliance Semiconductor
File Size 253.36 KB
Description Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
Datasheet download datasheet BS616LV2025 Datasheet
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Full PDF Text Transcription

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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable „ DESCRIPTION BS616LV2025 • Very low operation voltage : 4.5 ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade: 40mA (Max.) operating current I -grade: 45mA (Max.) operating current 0.6uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 5.0V -55 55ns (Max.) at Vcc = 5.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.
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