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BS616LV2025 Datasheet Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

Manufacturer: Brilliance Semiconductor

Overview: BSI „.

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Datasheet Details

Part number BS616LV2025
Manufacturer Brilliance Semiconductor
File Size 253.36 KB
Description Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
Download BS616LV2025 Download (PDF)

General Description

BS616LV2025 • Very low operation voltage : 4.5 ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade: 40mA (Max.) operating current I -grade: 45mA (Max.) operating current 0.6uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 5.0V -55 55ns (Max.) at Vcc = 5.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE1, CE2 and OE options • I/O Configuration x8/x16 selectable by CIO, LB and UB pin The BS616LV2025 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide range of 4.5V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both high speed and low power

Key Features

  • S Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable.

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